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Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials

PUBLISHER Wiley-Interscience (09/01/2007)
PRODUCT TYPE Hardcover (Hardcover)

Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE.

This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike.

  • Covers the most important materials within the field
  • The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment
  • Builds-on an established series known in the community
  • Highly pertinent to current and future developments in telecommunications and computer-processing industries.
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Product Format
Product Details
ISBN-13: 9780470852903
ISBN-10: 0470852909
Binding: Hardback or Cased Book (Sewn)
Content Language: English
More Product Details
Page Count: 464
Carton Quantity: 9
Product Dimensions: 6.97 x 1.28 x 9.71 inches
Weight: 2.29 pound(s)
Feature Codes: Bibliography, Index, Table of Contents, Illustrated
Country of Origin: GB
Subject Information
BISAC Categories
Technology & Engineering | Materials Science - General
Technology & Engineering | Industrial Technology
Dewey Decimal: 621.381
Library of Congress Control Number: 2007013981
Descriptions, Reviews, Etc.
jacket back
Currently, some 60% of the multi-billion dollar optoelectronics industry is based on liquid phase epitaxially (LPE) grown material. LPE is a mature technology and has been used in the production of III-V compound semiconductor optoelectronic devices for some forty years. LPE has been applied to silicon, germanium, SiC, and II-VI and IV-VI compound semiconductors, as well as magnetic garnets, superconductors, ferroelectrics, and other optical materials. Many semiconductor devices including LEDs, laser diodes, infrared detectors, heterojunction bipolar transistors and heterointerface solar cells were pioneered with LPE. This is mainly due to the low costs that have been achieved with this technology, but also due to the very high quality of material produced, which often exceeds that possible by vapor phase epitaxies.

As the chapters in this book describe in detail, on-going efforts and new developments in LPE continue to widen its scope of applications and circumvent its customary limitations. The contents cover some introductory chapters, including an historical one on work in Russia prior to 1990, one on phase diagrams and modeling and one on equipment issues, before discussing the most important materials from silicon/silicon carbide, through the III-V and II-IV compounds to garnets, nitrides and a chapter on novel developments and one on LEDs. The contributors come from a wide variety of countries and include both academics and industrialists to give a balanced treatment.

This book is mainly intended for postgraduate students to enable them to gain an insight into this extremely important area and specialist in the field both in academia and industry who will benefit from its wide-ranging and topical coverage of the subject.

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publisher marketing
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE.

This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike.

  • Covers the most important materials within the field
  • The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment
  • Builds-on an established series known in the community
  • Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Show More

Editor: Capper, Peter
Professor Hans J. Scheel started the Scheel Consulting company in 2001 after retiring from the Swiss Federal Institute of Technology. Starting out with a chemical background, he has more than 40 years of experience with crystal growth and epitaxy in university as well as industry. For his achievements in bulk crystal growth and epitaxy technologies, he received awards from IBM and from Swiss, British, Korean Crystal Growth Associations, was elected member of the Russian Academy of Engineering Sciences, and received his D.Sc. from Tohoku University, Japan. He is co-author and editor of 6 books, author of more than 100 publications and patents, has organized international workshops on crystal technology and has been visiting professor at Osaka and Tohoku Universities, Japan, as well as Shandong University, China.
Dr. Peter Capper is a Materials Team Leader at SELEX Sensors and Airborne Systems Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material Cadmium Mercury Telluride (CMT). He holds the patent for the application of the accelerated crucible rotation technique to CMT growth and is recognised as a world authority on CMT. He has written and edited 6 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium and a SPIE Symposium and has edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics.
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Hardcover