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High-Speed Semiconductor Devices

AUTHOR Sze, Simon M.; Sze, Simon M.; Sze, Simon M. et al.
PUBLISHER Wiley-Interscience (01/16/1991)
PRODUCT TYPE Hardcover (Hardcover)

Description
This book introduces the physical principles and operational characteristics of high speed semiconductor devices. Intended for use by advanced students as well as professional engineers and scientists involved in semiconductor device research, the book includes the most advanced and important topics in high speed semiconductor devices. Initial chapters cover material properties, advanced technologies and novel device building blocks, and serve as the basis for understanding and analyzing devices in subsequent chapters. The following chapters cover a group of closely related devices that includes MOSFETs, MESFETs, heterojunction FETs and permeable-base transistors, hot electron transistors, microwave diodes and photonic devices, among others.
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Product Format
Product Details
ISBN-13: 9780471623076
ISBN-10: 0471623075
Binding: Hardback or Cased Book (Sewn)
Content Language: English
More Product Details
Page Count: 656
Carton Quantity: 14
Product Dimensions: 6.44 x 1.28 x 9.59 inches
Weight: 2.20 pound(s)
Country of Origin: US
Subject Information
BISAC Categories
Technology & Engineering | Electronics - Semiconductors
Technology & Engineering | Electrical
Dewey Decimal: 621.381
Library of Congress Control Number: 90034858
Descriptions, Reviews, Etc.
publisher marketing
This book introduces the physical principles and operational characteristics of high speed semiconductor devices. Intended for use by advanced students as well as professional engineers and scientists involved in semiconductor device research, the book includes the most advanced and important topics in high speed semiconductor devices. Initial chapters cover material properties, advanced technologies and novel device building blocks, and serve as the basis for understanding and analyzing devices in subsequent chapters. The following chapters cover a group of closely related devices that includes MOSFETs, MESFETs, heterojunction FETs and permeable-base transistors, hot electron transistors, microwave diodes and photonic devices, among others.
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Editor: Sze, Simon M.
Gary S. May, Ph.D. is Executive Assistant to the President and Motorola Foundation Professor of Microelectronics in the School of Electrical and Computer Engineering at the Georgia Institute of Technology. Dr. May was a national Science Foundation national Young Investigator, Georgia Techs Outstanding Young Alumnus, received Georgia Techs Outstanding Service Award, and was named a Giant of Science by the Quality Education for Minorities network in 2001. He was a member of the NSF Engineering Advisory Committee, served on and chaired the NSF Committee for Equal Opportunity in Science and Engineering, and was Editor-in-Chief for "IEEE Transactions of Semiconductor Manufacturing" from 1997 to 2001. Dr. May currently serves as chair of the National Advisory Board for the National Society of Black Engineers.

Simon M. Sze, Ph.D. is UMC Chair Professor of National Chiao Tung University, and President of the National Nano Device Laboratories. He has received the IEEE Ebers Award, the Sun Yet-sen Award, the National Science and Technology Award, and the National Chair Professor Award. He is a Life Fellow of IEEE, a member of the Academia Sinica, the Chinese Academy of Engineering, and the US National Academy of Engineering. He has authored or coauthored over 150 technical papers, and has written, edited, and contributed to 24 books. His book "Physics of Semiconductor Devices" (Wiley 1969, 2nd Ed, 1981) is the "most" cited work in contemporary engineering and applied science publications (over 12,000 citations from ISI Press).

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List Price $319.95
Your Price  $316.75
Hardcover