Ionizing Radiation Effects in Mos Devices and Circuits
| AUTHOR | Dressendorfer, Paul V.; Ma, T. P.; Dressendor et al. |
| PUBLISHER | Wiley-Interscience (04/18/1989) |
| PRODUCT TYPE | Hardcover (Hardcover) |
Description
This is the first comprehensive overview describing the effects of ionizing radiation on MOS devices, and how to design, fabricate, and test integrated circuits intended for use in a radiation environment. It also addresses process-induced radiation effects in the fabrication of high-density circuits, and reviews the history of radiation-hard technology, providing background information for those new to the field. The book includes a comprehensive review of the literature, and an annotated listing of research activities in radiation-hardness research. The volume will be of benefit to semi conductor process development engineers, device and circuit development engineers, device physicists, reliability assurance engineers, project managers and stress analysts.
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Product Format
Product Details
ISBN-13:
9780471848936
ISBN-10:
047184893X
Binding:
Hardback or Cased Book (Sewn)
Content Language:
English
More Product Details
Page Count:
608
Carton Quantity:
14
Product Dimensions:
6.58 x 1.35 x 9.62 inches
Weight:
2.09 pound(s)
Feature Codes:
Annotated
Country of Origin:
US
Subject Information
BISAC Categories
Technology & Engineering | Electronics - Semiconductors
Technology & Engineering | General
Dewey Decimal:
621.381
Library of Congress Control Number:
88029180
Descriptions, Reviews, Etc.
publisher marketing
This is the first comprehensive overview describing the effects of ionizing radiation on MOS devices, and how to design, fabricate, and test integrated circuits intended for use in a radiation environment. It also addresses process-induced radiation effects in the fabrication of high-density circuits, and reviews the history of radiation-hard technology, providing background information for those new to the field. The book includes a comprehensive review of the literature, and an annotated listing of research activities in radiation-hardness research. The volume will be of benefit to semi conductor process development engineers, device and circuit development engineers, device physicists, reliability assurance engineers, project managers and stress analysts.
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List Price $372.95
Your Price
$369.22