Kristally GE-Si I Ikh Svoystva
| AUTHOR | Kazimova Vyusalya |
| PUBLISHER | LAP Lambert Academic Publishing (05/08/2013) |
| PRODUCT TYPE | Paperback (Paperback) |
Description
V rabote predstavleny rezul'taty issledovaniy po polucheniyu slozhnolegirovannykh kristallov Ge-Si, s zadannym sostavom i kontsentratsiey primesey medi, indiya i sur'my, a takzhe po elektrotransportnym svoystvam i spektru primesnykh sostoyaniy v etikh materialakh.V priblizhenii polnost'yu razmeshennogo rasplava, reshena teoreticheskaya zadacha po kontsentratsionnomu raspredeleniyu osnovnykh komponentov i primesey v kristallakh tvyerdykh rastvorov, vyrashchennykh iz rasplava konservativnymi i nekonservativnymi metodami. Pokazano, chto poluchennye matematicheskie sootnosheniya udovletvoritel'no opisyvayut eksperimental'nye dannye po raspredeleniyu komponentov i primesey indiya i sur'my v kristallakh germaniy-kremniy. Razrabotany metodiki vyrashchivaniya i legirovaniya primesyami In i Sb kristallov Ge-Si (0
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Product Format
Product Details
ISBN-13:
9783659388248
ISBN-10:
3659388246
Binding:
Paperback or Softback (Trade Paperback (Us))
Content Language:
Russian
More Product Details
Page Count:
152
Carton Quantity:
48
Product Dimensions:
6.00 x 0.35 x 9.00 inches
Weight:
0.51 pound(s)
Feature Codes:
Illustrated
Country of Origin:
US
Subject Information
BISAC Categories
Science | Physics - General
Descriptions, Reviews, Etc.
publisher marketing
V rabote predstavleny rezul'taty issledovaniy po polucheniyu slozhnolegirovannykh kristallov Ge-Si, s zadannym sostavom i kontsentratsiey primesey medi, indiya i sur'my, a takzhe po elektrotransportnym svoystvam i spektru primesnykh sostoyaniy v etikh materialakh.V priblizhenii polnost'yu razmeshennogo rasplava, reshena teoreticheskaya zadacha po kontsentratsionnomu raspredeleniyu osnovnykh komponentov i primesey v kristallakh tvyerdykh rastvorov, vyrashchennykh iz rasplava konservativnymi i nekonservativnymi metodami. Pokazano, chto poluchennye matematicheskie sootnosheniya udovletvoritel'no opisyvayut eksperimental'nye dannye po raspredeleniyu komponentov i primesey indiya i sur'my v kristallakh germaniy-kremniy. Razrabotany metodiki vyrashchivaniya i legirovaniya primesyami In i Sb kristallov Ge-Si (0
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