Element Reram Na Osnove Nestekhiometricheskikh Anodnykh Oksidov Niobiya
| AUTHOR | Kuroptev Vadim |
| PUBLISHER | LAP Lambert Academic Publishing (07/10/2013) |
| PRODUCT TYPE | Paperback (Paperback) |
Description
Kniga posvyashchena razrabotke i issledovaniyu prototipa elementa ReRAM (memristora) na osnove bipolyarnogo rezis-tivnogo pereklyucheniya v nestekhiometricheskikh anodnykh oksidnykh plenkakh niobiya. V rabote privoditsya obzor literatury po izuchaemoy probleme, predstavleny rezul'taty poetapnoy razrabotki i eksperimental'nogo issledovaniya prototipa memristora s tochki zreniya osobennostey tekhnologii ego polucheniya, prisushchikh emu svoystv i kharakteristik, analiza vliyaniya vneshnikh i vnutrennikh faktorov i dr. Itogom raboty yavlyaetsya vpervye razrabotannyy i issledovannyy prototip elementa pamyati ReRAM na osnove bipolyarnogo rezistivnogo pereklyucheniya v nestekhiometricheskikh anodnykh oksidnykh plen-kakh niobiya. Pokazany vysokaya prakticheskaya znachimost' i per-spektivnost' dannogo vida pereklyucheniya dlya razrabotki ReRAM, opredeleny dal'neyshie napravleniya issledovaniy.
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Product Format
Product Details
ISBN-13:
9783659405617
ISBN-10:
3659405612
Binding:
Paperback or Softback (Trade Paperback (Us))
Content Language:
Russian
More Product Details
Page Count:
104
Carton Quantity:
68
Product Dimensions:
6.00 x 0.25 x 9.00 inches
Weight:
0.36 pound(s)
Feature Codes:
Illustrated
Country of Origin:
US
Subject Information
BISAC Categories
Technology & Engineering | Electronics - General
Descriptions, Reviews, Etc.
publisher marketing
Kniga posvyashchena razrabotke i issledovaniyu prototipa elementa ReRAM (memristora) na osnove bipolyarnogo rezis-tivnogo pereklyucheniya v nestekhiometricheskikh anodnykh oksidnykh plenkakh niobiya. V rabote privoditsya obzor literatury po izuchaemoy probleme, predstavleny rezul'taty poetapnoy razrabotki i eksperimental'nogo issledovaniya prototipa memristora s tochki zreniya osobennostey tekhnologii ego polucheniya, prisushchikh emu svoystv i kharakteristik, analiza vliyaniya vneshnikh i vnutrennikh faktorov i dr. Itogom raboty yavlyaetsya vpervye razrabotannyy i issledovannyy prototip elementa pamyati ReRAM na osnove bipolyarnogo rezistivnogo pereklyucheniya v nestekhiometricheskikh anodnykh oksidnykh plen-kakh niobiya. Pokazany vysokaya prakticheskaya znachimost' i per-spektivnost' dannogo vida pereklyucheniya dlya razrabotki ReRAM, opredeleny dal'neyshie napravleniya issledovaniy.
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$70.41